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October 03, 2024
Picture by way of RTX
ANDOVER, Massachusetts. Raytheon received a three-year, two-phase contract from DARPA to develop ultra-wide bandgap semiconductors (UWBGS) primarily based on diamond and aluminum nitride know-how, the corporate introduced in a press release.
Within the first section, Raytheon’s Superior Expertise group will work on creating semiconductor movies from diamond and aluminum nitride and combine them into digital gadgets, in keeping with the assertion. The second section will deal with optimizing these supplies for bigger wafer manufacturing to help sensor purposes.
UWBGS supplies are anticipated to enhance energy supply and thermal administration in digital programs, with potential makes use of in radar, communications, and digital warfare, the corporate says. This work will happen at Raytheon’s foundry in Andover, Massachusetts.
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This articles is written by : Nermeen Nabil Khear Abdelmalak
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